Method for manufacturing single-crystal silicon

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United States of America Patent

PATENT NO 9702055
APP PUB NO 20150040820A1
SERIAL NO

14362368

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Abstract

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The success rate of multi-pulled single crystal growth by the Czochralski method is enhanced by the use of a melt crucible having an amount of barium on an inner surface thereof which varies inversely with the diameter of the crucible. At least one single crystal is separated from the melt by a free span method.

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Patent Owner(s)

Patent OwnerAddress
SILTRONIC AGEINSTEINSTRASSE 172 TOWER B / BLUE TOWER MUNICH 81677

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kato, Hideo Gifu, JP 230 3406
Kyufu, Shinichi Yamaguchi, JP 3 1

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