Method for manufacturing tungsten-based capacitor element
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United States of America Patent
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Jul 11, 2017
Grant Date -
Feb 16, 2017
app pub date -
Jan 20, 2015
filing date -
May 1, 2014
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Abstract
The present invention provides a method for producing a capacitor element having good LC characteristics, wherein, after a chemical conversion process to form a dielectric layer on the surface layer of an anode body obtained by forming a powder mainly comprising tungsten, followed by sintering, a semiconductor layer and a conductor layer are sequentially formed on the dielectric layer; an etching process is conducted before forming the dielectric layer to remove a natural oxide film formed on the surface layer on the outer surface and on the surface inside the pores of the anode body so as to adjust the film thickness to a range of 0.5 to 5.0 nm; and the chemical conversion process is conducted at a temperature from −4 to 18° C. for 7 to 110 minutes after reaching a predetermined voltage.
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