Method to form SOI fins on a bulk substrate with suspended anchoring
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United States of America Patent
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-
Jul 11, 2017
Grant Date -
Dec 22, 2016
app pub date -
Apr 15, 2016
filing date -
Jun 18, 2015
priority date (Note) -
In Force
status (Latency Note)
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Abstract
A method of fabricating non-tilted, electrically isolated fins from a bulk substrate is provided. A plurality of semiconductor fins is formed extending upwards from a remaining portion of a bulk semiconductor substrate. Each semiconductor fin includes a hard mask cap. A sacrificial dielectric material portion is formed between each semiconductor fin, wherein each sacrificial dielectric material portion has a topmost surface that is vertically offset and located below a topmost surface of each hard mask cap. An anchoring structure having an opening is then formed atop each sacrificial dielectric material portion and each hard mask cap. Next, an entirety of each sacrificial dielectric material portion is removed by etching through the opening. An oxide layer is then formed within an upper portion of the remaining portion of the bulk semiconductor substrate, wherein a portion of the oxide layer extends beneath each semiconductor fin. Next, the anchoring structure is removed.
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