III-V field effect transistor on a dielectric layer
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United States of America Patent
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Jul 11, 2017
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app pub date -
Dec 18, 2015
filing date -
Dec 18, 2015
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Abstract
An electrical device comprising a base semiconductor layer of a silicon including material; a dielectric layer present on the base semiconductor layer; a first III-V semiconductor material area present in a trench in the dielectric layer, wherein a via of the III-V semiconductor material extends from the trench through the dielectric layer into contact with the base semiconductor layer; a second III-V semiconductor material area present in the trench in the dielectric layer wherein the second III-V semiconductor material area does not have a via extending through the dielectric layer into contact with the base semiconductor layer; and a semiconductor device present on the second III-V semiconductor material area, wherein the first III-V semiconductor material area and the second III-V semiconductor material area are separated by a low aspect ratio trench extending to the dielectric layer.
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