Magnetoresistive element and manufacturing method of the same

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United States of America Patent

PATENT NO 9705076
SERIAL NO

14478971

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Abstract

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According to one embodiment, there is provided a magnetoresistive element, including a lower electrode having crystallinity on a substrate, a first conductive layer including an amorphous state on the lower electrode, a buffer layer on the first conductive layer, and an MTJ element on the buffer layer.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Eeh, Youngmin Seoul, KR 46 234
Nagamine, Makoto Seoul, KR 49 1118
Nagase, Toshihiko Seoul, KR 162 2986
Nakayama, Masahiko Seoul, KR 115 1775
Sawada, Kazuya Seoul, KR 76 400
Ueda, Koji Seoul, KR 174 1357
Watanabe, Daisuke Seoul, KR 302 1635

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