Tritium direct conversion semiconductor device having increased active area

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United States of America Patent

PATENT NO 9711250
APP PUB NO 20150001988A1
SERIAL NO

14313953

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Abstract

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A betavoltaic power source. The betavoltaic power source comprises a source of beta particles, a substrate with shaped features defined therein and a InGaP betavoltaic junction disposed between the source of beta particles and the substrate, and also having shaped features therein responsive to the shaped features in the substrate, the InGaP betavoltaic junction device for collecting the beta particles and for generating electron hole pairs responsive thereto.

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Patent Owner(s)

Patent OwnerAddress
CITY LABS INC301 CIVIC COURT HOMESTEAD FL 33030

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cabauy, Peter Miami, US 23 136

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