Method of measuring vertical beam profile in an ion implantation system having a vertical beam angle device
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United States of America Patent
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Jul 18, 2017
Grant Date -
Jun 30, 2016
app pub date -
Dec 17, 2015
filing date -
Dec 26, 2014
priority date (Note) -
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Abstract
An ion implantation system measurement system has a scan arm that rotates about an axis and a workpiece support to translate a workpiece through the ion beam. A first measurement component downstream of the scan arm provides a first signal from the ion beam. A second measurement component with a mask is coupled to the scan arm to provide a second signal from the ion beam with the rotation of the scan arm. The mask permits varying amounts of the ion radiation from the ion beam to enter a Faraday cup based on an angular orientation between the mask and the ion beam. A blocking plate selectively blocks the ion beam to the first faraday based on the rotation of the scan arm. A controller determines an angle and vertical size of the ion beam based on the first signal, second signal, and orientation between the mask and ion beam as the second measurement component rotates.
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