Method of manufacturing a three dimensional integrated circuit by transfer of a mono-crystalline layer

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United States of America Patent

PATENT NO 9711407
SERIAL NO

12970602

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Abstract

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A semiconductor device includes a first mono-crystallized layer including first transistors, and a first metal layer forming at least a portion of connections between the first transistors; and a second layer including second transistors, the second transistors including mono-crystalline material, the second layer overlying the first metal layer, wherein the first metal layer includes aluminum or copper, and wherein the second layer is less than one micron in thickness and includes logic cells.

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Patent Owner(s)

  • MONOLITHIC 3D INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Beinglass, Israel Sunnyvale, US 60 2983
Cronquist, Brian San Jose, US 282 3791
de, Jong J L Cupertino, US 7 217
Lim, Paul Fremont, US 12 701
Or-Bach, Zvi San Jose, US 531 17663
Sekar, Deepak C San Jose, US 218 3420

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