Wafer-based light source parameter control
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United States of America Patent
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Jul 25, 2017
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app pub date -
Jun 4, 2014
filing date -
Jun 11, 2013
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Abstract
A photolithography method includes instructing an optical source to produce a pulsed light beam; scanning the pulsed light beam across a wafer of a lithography exposure apparatus to expose the wafer with the pulsed light beam; during scanning of the pulsed light beam across the wafer, receiving a characteristic of the pulsed light beam at the wafer; receiving a determined value of a physical property of a wafer for a particular pulsed light beam characteristic; and based on the pulsed light beam characteristic that is received during scanning and the received determined value of the physical property, modifying a performance parameter of the pulsed light beam during scanning across the wafer.
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