Gate aligned contact and method to fabricate same
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United States of America Patent
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Jul 25, 2017
Grant Date -
Dec 5, 2013
app pub date -
Dec 22, 2011
filing date -
Dec 22, 2011
priority date (Note) -
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status (Latency Note)
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Abstract
Gate aligned contacts and methods of forming gate aligned contacts are described. For example, a method of fabricating a semiconductor structure includes forming a plurality of gate structures above an active region formed above a substrate. The gate structures each include a gate dielectric layer, a gate electrode, and sidewall spacers. A plurality of contact plugs is formed, each contact plug formed directly between the sidewall spacers of two adjacent gate structures of the plurality of gate structures. A plurality of contacts is formed, each contact formed directly between the sidewall spacers of two adjacent gate structures of the plurality of gate structures. The plurality of contacts and the plurality of gate structures are formed subsequent to forming the plurality of contact plugs.
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