MEMS pressure sensor and method of manufacturing the same

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United States of America Patent

PATENT NO 9718669
APP PUB NO 20170190567A1
SERIAL NO

14984469

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Abstract

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A micro-electro mechanical system (MEMS) pressure sensor includes a first substrate, a second substrate and a sensing structure. The second substrate is substantially parallel to the first substrate. The sensing structure is between the first substrate and the second substrate, and bonded to a portion of the first substrate and a portion of the second substrate, in which a first space between the first substrate and the sensing structure is communicated with outside, and a second space between the second substrate and the sensing structure is communicated with or isolated from the outside.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTDNO 8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Tung-Tsun Hsinchu, TW 68 338
Chu, Chia-Hua Hsinchu County, TW 192 2736

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