Substrate with a multilayer reflective film, reflective mask blank for EUV lithography, reflective mask for EUV lithography and method of manufacturing the same, and method of manufacturing a semiconductor device
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United States of America Patent
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Aug 1, 2017
Grant Date -
Jul 14, 2016
app pub date -
Sep 9, 2014
filing date -
Sep 11, 2013
priority date (Note) -
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Abstract
A substrate with a multilayer reflective film that yields a reflective mask achieving high reflectance and exhibiting excellent cleaning resistance. The present invention is directed to a substrate with a multilayer reflective film, which has: a substrate; a multilayer reflective film, formed on a substrate, having a layer comprising Si as a high refractive-index material and a layer comprising a low refractive-index material, wherein the layers are periodically laminate; and a Ru protective film, formed on the multilayer reflective film, for protecting the multilayer reflective film, wherein the surface layer of the multilayer reflective film on the other side of the substrate is the layer comprising Si, and wherein the Ru protective film comprises a Ru compound comprising Ru and Ti, wherein the Ru compound contains Ru in an amount greater than that in the stoichiometric composition of RuTi.
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