Method and apparatus for shaping a gas profile near bevel edge

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United States of America Patent

PATENT NO 9721782
SERIAL NO

13157122

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Abstract

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A method for etching a bevel edge of a substrate in a processing chamber is provided. The method includes flowing an inert gas into a center region of the processing chamber defined above a center region of the substrate and flowing a mixture of an inert gas and a processing gas over an edge region of the substrate. The method further includes striking a plasma in the edge region, wherein the flow of the inert gas and the flow of the mixture maintain a mass fraction of the processing gas substantially constant. A processing chamber configured to clean a bevel edge of a substrate is also provided.

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Patent Owner(s)

  • LAM RESEARCH CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bailey,, III Andrew D Pleasanton, US 109 2274
Chen, Jack Fremont, US 177 1750
Shareef, Iqbal Fremont, US 18 471

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