Method and apparatus for depositing amorphous silicon film

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United States of America Patent

PATENT NO 9721798
APP PUB NO 20160211141A1
SERIAL NO

14915705

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Abstract

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Provided is a method and apparatus for depositing an amorphous silicon film. The method includes supplying a source gas and an atmospheric gas onto a substrate in a state where the substrate is loaded in a chamber to deposit the amorphous silicon film on the substrate. The atmospheric gas includes at least one of hydrogen and helium. The source gas includes at least one of silane (SiH2), disilane (Si2H6), and dichlorosilane (SiCl2H2).

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Patent Owner(s)

Patent OwnerAddress
EUGENE TECHNOLOGY CO LTD42 CHUGYE-RO YANGJI-MYEON CHEOIN-GU YONGIN-SI GYEONGGI-DO 17156

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cho, Sung-Kil Yongin-si, KR 11 47
Choi, Ho-Min Yongin-si, KR 3 0
Jung, Woo-Duck Suwon-si, KR 3 0
Kim, Hai-Won Icheon-si, KR 11 26
Lee, Koon-Woo Yongin-si, KR 3 0
Oh, Wan-Suk Icheon-si, KR 3 0
Shin, Seung-Woo Hwaseong-si, KR 40 494

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