Method of depositing copper using physical vapor deposition

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United States of America Patent

PATENT NO 9728414
SERIAL NO

14313751

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Abstract

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The present method of forming an electronic structure includes providing a tantalum base layer and depositing a layer of copper on the tantalum layer, the deposition being undertaken by physical vapor deposition with the temperature of the base layer at 50.degree. C. or less, with the deposition taking place at a power level of 300 W or less.

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Patent Owner(s)

  • ADVANCED MICRO DEVICES, INC.;CYPRESS SEMICONDUCTOR CORPORATION;SPANSION LLC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Robie, Stephen B Cupertino, US 3 4
Romero, Jeremias D Hayward, US 10 80
Yu, Wen Fremont, US 43 137

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