Parasitic plasma prevention in plasma processing chambers

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United States of America Patent

PATENT NO 9728429
APP PUB NO 20120024449A1
SERIAL NO

12844527

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Abstract

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Parasitic plasma in voids in a component of a plasma processing chamber can be eliminated by covering electrically conductive surfaces in an interior of the voids with a sleeve. The voids can be gas holes, lift pin holes, helium passages, conduits and/or plenums in chamber components such as an upper electrode and a substrate support.

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Patent Owner(s)

Patent OwnerAddress
LAM RESEARCH CORPORATION4650 CUSHING PARKWAY FREMONT CA 94538

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Martinez, Larry Gilroy, US 4 45
Ricci, Anthony Sunnyvale, US 15 370
Ullal, Saurabh Union City, US 24 226

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