Memory device and fabricating method thereof

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United States of America Patent

PATENT NO 9735161
APP PUB NO 20170069632A1
SERIAL NO

14848357

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Abstract

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A memory device and a method for fabricating the same are provided. The memory device includes a substrate, a first active region, a second active region, a gate structure, and a capping layer. The first active region and the second active region are alternately disposed in the substrate. The gate structure is disposed in the substrate and between the first active region and the second active region. The capping layer is over the gate structure to define a void therebetween.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Wu, Tieh-Chiang Taoyuan, TW 73 251

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