High electron mobility transistor (HEMT)
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United States of America Patent
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Aug 15, 2017
Grant Date -
Jun 22, 2017
app pub date -
Dec 21, 2015
filing date -
Dec 21, 2015
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Abstract
A high electron mobility transistor (HEMT) device with a highly resistive layer co-doped with carbon (C) and a donor-type impurity and a method for making the HEMT device is disclosed. In one embodiment, the HEMT device includes a substrate, the highly resistive layer co-doped with C and the donor-type impurity formed above the substrate, a channel layer formed above the highly resistive layer, and a barrier layer formed above the channel layer. In one embodiment, the highly resistive layer comprises gallium nitride (GaN). In one embodiment, the donor-type impurity is silicon (Si). In another embodiment, the donor-type impurity is oxygen (O).
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