Trench-gate RESURF semiconductor device and manufacturing method

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United States of America Patent

PATENT NO 9735254
SERIAL NO

14644272

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Abstract

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A trench-gate device with lateral RESURF pillars has an additional implant beneath the gate trench. The additional implant reduces the effective width of the semiconductor drift region between the RESURF pillars, and this provides additional gate shielding which improves the electrical characteristics of the device.

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Patent Owner(s)

  • NEXPERIA B.V.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Peake, Steven Thomas Warrington, GB 12 75
Rutter, Philip Stockport, GB 26 365

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