Semiconductor device

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United States of America Patent

PATENT NO 9735290
SERIAL NO

14984880

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Abstract

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An integrated diode (100) comprising a substrate (102); a Schottky cell (104) on the substrate (102); a heterojunction cell (106) on the substrate (102); a common anode contact (108) for both the Schottky cell (104) and the heterojunction cell (106); and a common cathode contact (110) for both the Schottky cell (104) and the heterojunction cell (106).

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Patent Owner(s)

Patent OwnerAddress
NEXPERIA B VNIJMEGEN NIJMEGEN GELDERLAND

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Boettcher, Tim Hamburg, DE 15 62
Fischer, Jan Philipp Lueneburg, DE 1 1
Igel-Holtzendorff, Thomas Hamburg, DE 4 10

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