Noble metal / non-noble metal electrode for RRAM applications

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United States of America Patent

PATENT NO 9735358
SERIAL NO

15134128

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Abstract

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A method for forming a non-volatile memory device includes disposing a junction layer comprising a doped silicon-bearing material in electrical contact with a first conductive material, forming a switching layer comprising an undoped amorphous silicon-bearing material upon at least a portion of the junction layer, disposing a layer comprising a non-noble metal material upon at least a portion of the switching layer, disposing an active metal layer comprising a noble metal material upon at least a portion of the layer, and forming a second conductive material in electrical contact with the active metal layer.

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Patent Owner(s)

  • CROSSBAR, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jo, Sung Hyun Sunnyvale, US 125 2909
Kim, Kuk-Hwan San Jose, US 117 2141
Kumar, Tanmay Pleasanton, US 106 3388

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