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Abstract

An integrated circuit, a method of forming an integrated circuit, and a semiconductor are disclosed for preventing unauthorized use in radiation-hard applications. In one embodiment, the integrated circuit comprises a silicon-on-insulator (SOI) structure, a radiation insensitive sub-circuit, and a radiation sensitive sub-circuit. The SOI structure comprises a silicon substrate, a buried oxide layer, and an active silicon layer. The radiation insensitive sub-circuit is formed on the active layer, and includes a partially depleted transistor. The radiation sensitive sub-circuit is formed on the active layer, and includes a fully depleted transistor, to prevent operation of the radiation sensitive sub-circuit under specified radiation conditions. Each of the partially depleted transistor and the fully depleted transistor includes a channel region formed in the active silicon layer, and the channel regions of the partially depleted transistor and the fully depleted transistor have substantially the same thickness but different doping concentrations.

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First Claim