Mask, manufacturing method thereof and manufacturing method of a thin film transistor
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United States of America Patent
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Aug 22, 2017
Issued Date -
Jan 14, 2016
app pub date -
Dec 11, 2014
filing date -
Jul 9, 2014
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Abstract
The present invention discloses a mask, a manufacturing method thereof and a manufacturing method of a thin film transistor. The mask includes: a first substrate and phase shift patterns formed above the first substrate, wherein an opening area is formed between the adjacent phase shift patterns and a halftone pattern is formed at positions corresponding to the phase shift patterns and the opening area. In the present invention, when an active layer pattern, a source and a drain are formed through one patterning process by using the mask, the design of narrow channel of the thin film transistor can be realized. As the width of the channel region of the thin film transistor becomes narrow, the volume of the thin film transistor can be effectively reduced, and the super-miniaturization of the thin film transistor can be achieved.
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