Magnetic RAM array architecture

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United States of America Patent

PATENT NO 9747968
SERIAL NO

15356117

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Abstract

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A magnetic random access memory (MRAM) array including: a plurality of MRAM cells arranged in an array configuration, each comprising a first type nTron and a magnetic memory element; a wordline select circuit comprising of a second type nTron to drive a plurality of parallel wordlines; and a plurality of bitline select circuits, each comprising of said second type nTron for writing to and reading from a column of memory cells in the array and each capable of selecting a single MRAM cell for a memory read or write operation, wherein the second nTron has a higher current drive than the first nTron.

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Patent Owner(s)

  • HYPRES, INC.;RAYTHEON BBN TECHNOLOGIES CORP.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kirichenko, Alex Pleasantville, US 4 31
Mukhanov, Oleg Putnam Valley, US 20 484
Ohki, Thomas Arlington, US 5 13

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