Process for integrated circuit fabrication including a uniform depth tungsten recess technique

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United States of America Patent

PATENT NO 9748351
APP PUB NO 20170012105A1
SERIAL NO

15273777

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Abstract

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Dummy gates are removed from a pre-metal layer to produce a first opening (with a first length) and a second opening (with a second length longer than the first length). Work function metal for a metal gate electrode is provided in the first and second openings. Tungsten is deposited to fill the first opening and conformally line the second opening, thus leaving a third opening. The thickness of the tungsten layer substantially equals the length of the first opening. The third opening is filled with an insulating material. The tungsten is then recessed in both the first and second openings using a dry etch to substantially a same depth from a top surface of the pre-metal layer to complete the metal gate electrode. Openings left following the recess operation are then filled with a dielectric material forming a cap on the gate stack which includes the metal gate electrode.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.;INTERNATIONAL BUSINESS MACHINES CORPORATION;STMICROELECTRONICS, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Liu, Qing Watervliet, US 474 5030
Xie, Ruilong Schenectady, US 1400 10631
Yeh, Chun-Chen Clifton Park, US 417 3453

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