Reversed build-up substrate for 2.5D

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United States of America Patent

PATENT NO 9754866
SERIAL NO

15248726

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Abstract

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A method of making an assembly can include forming a circuit structure defining front and rear surfaces, and forming a substrate onto the rear surface. The forming of the circuit structure can include forming a first dielectric layer coupled to the carrier. The first dielectric layer can include front contacts configured for joining with contacts of one or more microelectronic elements, and first traces. The forming of the circuit structure can include forming rear conductive elements at the rear surface coupled with the front contacts through the first traces. The forming of the substrate can include forming a dielectric element directly on the rear surface. The dielectric element can have first conductive elements facing the rear conductive elements and joined thereto. The dielectric element can include second traces coupled with the first conductive elements. The forming of the substrate can include forming terminals at a surface of the substrate.

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Patent Owner(s)

  • INVENSAS CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Haba, Belgacem Saratoga, US 717 20639
Katkar, Rajesh San Jose, US 221 4423
Shen, Hong Palo Alto, US 238 3088
Uzoh, Cyprian Emeka San Jose, US 329 9032
Wang, Liang Milpitas, US 569 4748

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