Designable channel FinFET fuse

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9754875
SERIAL NO

15214647

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Abstract

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On-chip, doped semiconductor fuse regions compatible with FinFET CMOS fabrication are formed from the channel regions of selected fins. One or more fin dimensions are optionally reduced in selected channel regions of the fins following dummy gate removal, such as height and/or width. The channel regions from which the fuse regions are formed are doped to provide electrical conductivity, amorphized using ion implantation, and then annealed to form substantially polycrystalline fuse regions. Source/drain regions function as terminals for the fuse regions.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fogel, Keith E Hopewell Junction, US 270 4155
Hashemi, Pouya White Plains, US 600 4483
Mochizuki, Shogo Clifton Park, US 298 1914
Reznicek, Alexander Troy, US 1408 11211

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