Dual-material mandrel for epitaxial crystal growth on silicon

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United States of America Patent

PATENT NO 9754969
SERIAL NO

15155898

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Abstract

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In one example, a method for fabricating a semiconductor device includes etching a layer of silicon to form a plurality of fins and growing layers of a semiconductor material directly on sidewalls of the plurality of fins, wherein the semiconductor material and surfaces of the sidewalls have different crystalline properties.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, Sanghoon White Plains, US 189 950
Leobandung, Effendi Stormville, US 536 4779
Wacaser, Brent A Putnam Valley, US 63 148

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