Epitaxial silicon wafer having reduced stacking faults

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9755022
APP PUB NO 20150380493A1
SERIAL NO

14850194

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Abstract

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An epitaxial silicon wafer includes a silicon wafer added with phosphorus so that resistivity of the silicon wafer falls at or below 0.9 mΩ·cm, an epitaxial film formed on a first side of the silicon wafer, and an oxidation film formed on a second side of the silicon wafer opposite to the first side, wherein an average number of Light Point Defect of a size of 90 nm or more observed on a surface of the epitaxial film is one or less per square centimeter.

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Patent Owner(s)

Patent OwnerAddress
SUMCO CORPORATION2-1 SHIBAURA 1-CHOME MINATO-KU TOKYO 1058634
SUMCO TECHXIV CORPORATIONOMURA-SHI NAGASAKI 856-8555

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kawashima, Tadashi Nagasaki, JP 17 42
Nonaka, Naoya Nagasaki, JP 9 15
Shinagawa, Masayuki Nagasaki, JP 6 77
Uesono, Gou Nagasaki, JP 2 8

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