Semiconductor device and method for manufacturing the same

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United States of America Patent

PATENT NO 9755055
SERIAL NO

14568227

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Abstract

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A semiconductor device manufacturing method of an embodiment includes the steps of: forming a first insulating layer on a semiconductor substrate; forming on the first insulating layer an amorphous or polycrystalline semiconductor layer having a narrow portion; forming on the semiconductor layer a second insulating layer having a thermal expansion coefficient larger than that of the semiconductor layer; performing thermal treatment; removing the second insulating layer; forming a gate insulating film on the side faces of the narrow portion; forming a gate electrode on the gate insulating film; and forming a source-drain region in the semiconductor layer.

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Nakabayashi, Yukio Kanagawa, JP 35 370
Numata, Toshinori Kanagawa, JP 28 579
Saitoh, Masumi Kanagawa, JP 95 894

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