Quantum detection element with low noise and method for manufacturing such a photodetection element

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United States of America Patent

PATENT NO 9755090
SERIAL NO

15105753

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Abstract

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According to one aspect, the invention relates to an element for quantum photodetection of an incident radiation in a spectral band centered around a central wavelength λ0, having a front surface intended for receiving said radiation, and including: a stack of layers of semiconductor material forming a PN or PIN junction and including at least one layer made of an absorbent semiconductor material having a cut-off wavelength λ0>λ0, the stack of layers of semiconductor material forming a resonant optical cavity; and a structure for coupling the incident radiation with the optical cavity such as to form a resonance at the central wavelength λ0 allowing the absorption of more than 80% in the layer of absorbent semiconductor material at said central wavelength, and an absence of resonance at the radiative wavelength λrad, wherein the radiative wavelength λrad is the wavelength for which, at operating temperature, the radiative recombination rate is the highest.

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Patent Owner(s)

  • CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE;ONERA (OFFICE NATIONAL D'ETUDES ET DE RECHERCHES AEROSPATIALES);OFFICE NATIONAL D'ETUDES ET DE RECHERCHES AÉROSPATIALS—ONERA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Haidar, Riad Paris, FR 12 47
Pardo, Fabrice Vitry-sur-Seine, FR 11 104
Pelouard, Jean-Luc Paris, FR 19 88
Portier, Benjamin Cachan, FR 1 5
Verdun, Michaël Orsay, FR 2 5

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