Method for reducing forming voltage in resistive random access memory

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United States of America Patent

PATENT NO 9761800
APP PUB NO 20140302659A1
SERIAL NO

14312628

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Abstract

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Methods for producing RRAM resistive switching elements having reduced forming voltage include preventing formation of interfacial layers, and creating electronic defects in a dielectric film. Suppressing interfacial layers in an electrode reduces forming voltage. Electronic defects in a dielectric film foster formation of conductive pathways.

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Patent Owner(s)

  • INTERMOLECULAR, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kuse, Ronald J San Diego, US 14 145
Phatak, Prashant B San Jose, US 69 637
Tong, Jinhong Santa Clara, US 45 1381

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