Copper alloy sputtering target, process for producing the same and semiconductor element wiring

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United States of America Patent

PATENT NO 9765425
APP PUB NO 20100219070A1
SERIAL NO

12778283

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Abstract

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A copper alloy sputtering target is provided and contains 0.01 to (less than) 0.5 wt % of at least one element selected from Al or Sn, and containing Mn or Si in a total amount of 0.25 wtppm or less. The above copper alloy sputtering target allows the formation of a wiring material for a semiconductor element, in particular, a seed layer being stable, uniform and free from the occurrence of coagulation during electrolytic copper plating and exhibits excellent sputtering film formation characteristics. A semiconductor element wiring formed with this target is also provided.

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Patent Owner(s)

Patent OwnerAddress
JX NIPPON MINING & METALS CORPORATION6-3 OTEMACHI 2-CHOME CHIYODA-KU TOKYO 1008164

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Okabe, Takeo Ibaraki, JP 37 308

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