Screen printing electrical contacts to nanowire areas

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United States of America Patent

PATENT NO 9768331
SERIAL NO

14338752

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Abstract

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A process is provided for contacting a nanostructured surface. The process may include (a) providing a substrate having a nanostructured material on a surface, (b) passivating the surface on which the nanostructured material is located, (c) screen printing onto the nanostructured surface and (d) firing the screen printing ink at a high temperature. In some embodiments, the nanostructured material compromises silicon. In some embodiments, the nanostructured material includes silicon nanowires. In some embodiments, the nanowires are around 150 nm, 250 nm, or 400 nm in length. In some embodiments, the nanowires have a diameter range between about 30 nm and about 200 nm. In some embodiments, the nanowires are tapered such that the base is larger than the tip. In some embodiments, the nanowires are tapered at an angle of about 1 degree, about 3 degrees, or about 10 degrees. In some embodiments, a high temperature can be approximately 700 C, 750 C, 800 C, or 850 C.

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Patent Owner(s)

Patent OwnerAddress
ADVANCED SILICON GROUP TECHNOLOGIES LLC173 BEDFORD ROAD LINCOLN MA 01773

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Black, Marcie R Lincoln, US 46 490
Chleboski, Richard Medway, US 3 6
Forziati, Joanne Everett, US 10 26
Jura, Michael Santa Monica, US 14 35
Miller, Jeffrey B Brookline, US 29 180
Murphy, Brian P Revere, US 99 262
Yim, Joanne San Francisco, US 11 24

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