Single electron transistor

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United States of America Patent

PATENT NO 9768401
SERIAL NO

15008089

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Abstract

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A transistor and a fabrication method thereof. A transistor includes a channel region including linkers, formed on a substrate, and a metallic nanoparticle grown from metal ions bonded to the linkers, a source region disposed at one end of the channel region, a drain region disposed at the other end of the channel region opposite of the source region, and a gate coupled to the channel region and serving to control migration of at least one charges in the channel region.

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Patent Owner(s)

  • SK INNOVATION CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
An, Sung-Jae Daejeon, KR 4 14
Kim, Jun-Hyung Daejeon, KR 188 2520
Kim, Tae-Hee Seoul, KR 63 506
Lee, Young-Keun Seoul, KR 163 2875
You, Hong Daejeon, KR 16 53

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