Defect reduction in seeded aluminum nitride crystal growth

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United States of America Patent

PATENT NO 9771666
SERIAL NO

14684754

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Abstract

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Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density≦100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

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CRYSTAL IS INC70 COHOES AVENUE GREEN ISLAND NY 12183

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bondokov, Robert T Watervliet, US 43 826
Gibb, Shawn Robert Clifton Park, US 5 101
Morgan, Kenneth Castleton, US 12 198
Rao, Shailaja P Albany, US 16 171
Schowalter, Leo J Latham, US 87 1665
Slack, Glen A Scotia, US 42 1293

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