Plasma ion source and charged particle beam apparatus

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9773637
APP PUB NO 20160240346A1
SERIAL NO

15019987

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A plasma ion source includes: a gas introduction chamber, into which raw gas is introduced; an insulation member provided in the gas introduction chamber; a plasma generation chamber connected to the gas introduction chamber; a coil that is wound along an outer circumference of the plasma generation chamber and to which high-frequency power is applied; and an electrode arranged at a boundary between the gas introduction chamber and the plasma generation chamber and having a plurality of through-holes formed therein, wherein a size of the through-holes is smaller than a length of a plasma sheath.

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Patent Owner(s)

  • HITACHI HIGH-TECHNOLOGIES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Oba, Hiroshi Tokyo, JP 30 94
Okabe, Mamoru Tokyo, JP 12 56
Sugiyama, Yasuhiko Tokyo, JP 50 243

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