Apparatus and method for producing group III nitride semiconductor device and method for producing semiconductor wafer
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United States of America Patent
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Sep 26, 2017
Grant Date -
May 21, 2015
app pub date -
Nov 19, 2014
filing date -
Nov 20, 2013
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Abstract
The production apparatus includes a shower head electrode, a susceptor for supporting a growth substrate, a first gas supply pipe, and a second gas supply pipe. The first gas supply pipe has at least one first gas exhaust outlet and supplies an organometallic gas containing Group III metal as a first gas, and the second gas supply pipe supplies a gas containing nitrogen gas as the second gas. The distance between the shower head electrode and the susceptor is greater than the distance between the first gas exhaust outlet of the first gas supply pipe and the susceptor.
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