Semiconductor device with a trench and method for manufacturing the same
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United States of America Patent
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Sep 26, 2017
Grant Date -
Dec 8, 2016
app pub date -
Jun 5, 2015
filing date -
Jun 5, 2015
priority date (Note) -
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status (Latency Note)
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Abstract
A semiconductor device is provided. The semiconductor device includes a substrate; an epitaxial layer disposed over the substrate; a gate electrode disposed over the epitaxial layer; a source region and a drain region disposed in the epitaxial layer at opposite sides of the gate electrode; a trench extending from a top surface of the epitaxial layer through the source region into the epitaxial layer, wherein the trench has a slanted side and a bottom surface; and a first conductive-type linking region having the first conductive type, wherein the first conductive-type linking region surrounds the slanted side of the trench and contacts the bottom surface of the trench, wherein the first conductive-type linking region electrically connects the source region and the substrate. The present disclosure also provides a method for manufacturing this semiconductor device.
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