Cell pillar structures and integrated flows

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United States of America Patent

PATENT NO 9773841
SERIAL NO

15056548

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Abstract

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Various embodiments comprise apparatuses and methods, such as a memory stack having a continuous cell pillar. In various embodiments, the apparatus includes a source material, a buffer material, a select gate drain (SGD), and a memory stack arranged between the source material and the SGD. The memory stack comprises alternating levels of conductor materials and dielectric materials. A continuous channel-fill material forms a cell pillar that is continuous from the source material to at least a level corresponding to the SGD.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Parat, Krishna K Palo Alto, US 85 1252
Simsek-Ege, Fatma Arzum Boise, US 136 1277

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