Vertical access devices, semiconductor device structures, and related methods
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United States of America Patent
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Sep 26, 2017
Grant Date -
Aug 27, 2015
app pub date -
Feb 26, 2014
filing date -
Feb 26, 2014
priority date (Note) -
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Abstract
A vertical access device comprises a semiconductive base comprising a first source/drain region, a semiconductive pillar extending vertically from the semiconductive base, and a gate electrode adjacent a sidewall of the semiconductive pillar. The semiconductive pillar comprises a channel region overlying the first source/drain region, and a second source/drain region overlying the channel region. An opposing sidewall of the semiconductive pillar is not adjacent the gate electrode or another gate electrode. Semiconductive device structures, methods of forming a vertical access device, and methods of forming a semiconductive structure are also described.
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