Method for preparing halftone phase shift photomask blank

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United States of America Patent

PATENT NO 9778560
APP PUB NO 20160291455A1
SERIAL NO

15078147

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Abstract

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A halftone phase shift film containing Si and N and/or O is deposited on a transparent substrate by reactive sputtering using a silicon-containing target with a reactive gas. Different powers are applied across a plurality of targets so that two different sputtering modes selected from metal, transition and reaction modes associated with a hysteresis curve are applied to the targets. The phase shift film exhibits satisfactory in-plane uniformity of optical properties.

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Patent Owner(s)

Patent OwnerAddress
SHIN-ETSU CHEMICAL CO LTDTOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kosaka, Takuro Joetsu, JP 52 118

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