Semiconductor constructions having conductive lines which merge with one another

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United States of America Patent

PATENT NO 9780029
SERIAL NO

14699664

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Abstract

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Some embodiments include methods of forming electrically conductive lines. Photoresist features are formed over a substrate, with at least one of the photoresist features having a narrowed region. The photoresist features are trimmed, which punches through the narrowed region to form a gap. Spacers are formed along sidewalls of the photoresist features. Two of the spacers merge within the gap. The photoresist features are removed to leave a pattern comprising the spacers. The pattern is extended into the substrate to form a plurality of recesses within the substrate. Electrically conductive material is formed within the recesses to create the electrically conductive lines. Some embodiments include semiconductor constructions having a plurality of lines over a semiconductor substrate. Two of the lines are adjacent to one another and are substantially parallel to one another except in a region wherein said two of the lines merge into one another.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Armstrong, Kyle Meridian, US 8 32
Hyatt, Michael D Boise, US 10 16
Kewley, David A Boise, US 34 137
Sipani, Vishal Boise, US 25 68
Van, Patten Michael Dean Fruitland, US 5 6
Yang, Ming-Chuan Meridian, US 20 45

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