Thermoelectric device

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United States of America Patent

PATENT NO 9780277
SERIAL NO

14638690

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A thermoelectric device includes a semiconductor stacked thermoelectric thin film including a first high-purity layer composed of SiGe as a main material and a composite carrier supply layer formed on the first high-purity layer. The composite carrier supply layer includes a second high-purity layer and third high-purity layer composed of Si as a main material, and a carrier supply layer held between the second and third high-purity layers and composed of SiGe as a main material. The carrier supply layer is a P-type carrier supply layer to which an additive of a group XIII element is added or a N-type carrier supply layer to which an additive of a group XV element is added.

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Patent Owner(s)

  • TDK CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Asatani, Takashi Tokyo, JP 17 49
Maekawa, Kazuya Tokyo, JP 51 246

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