Cross point arrays of 1-R nonvolatile resistive change memory cells using continuous nanotube fabrics

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United States of America Patent

PATENT NO 9783255
SERIAL NO

15197185

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Abstract

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The present disclosure is directed toward carbon based diodes, carbon based resistive change memory elements, resistive change memory having resistive change memory elements and carbon based diodes, methods of making carbon based diodes, methods of making resistive change memory elements having carbon based diodes, and methods of making resistive change memory having resistive change memory elements having carbons based diodes. The carbon based diodes can be any suitable type of diode that can be formed using carbon allotropes, such as semiconducting single wall carbon nanotubes (s-SWCNT), semiconducting Buckminsterfullerenes (such as C60 Buckyballs), or semiconducting graphitic layers (layered graphene). The carbon based diodes can be pn junction diodes, Schottky diodes, other any other type of diode formed using a carbon allotrope. The carbon based diodes can be placed at any level of integration in a three dimensional (3D) electronic device such as integrated with components or wiring layers.

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Patent Owner(s)

  • NANTERO, INC.

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bertin, Claude L Venice, US 253 9450
Cleavelin, C Rinn Lubbock, US 22 1362
Huang, X M Henry Cupertino, US 27 624
Manning, H Montgomery Eagle, US 148 2934
Rueckes, Thomas Byfield, US 210 7753

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