Synthesis and use of precursors for ALD of tellurium and selenium thin films

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United States of America Patent

PATENT NO 9783563
SERIAL NO

14882083

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Abstract

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Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided. ALD processes are also provided for forming Se-containing thin films, such as Sb—Se, Ge—Se, Ge—Sb—Se, Bi—Se, and Zn—Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR1R2R3)2 are preferably used, wherein R1, R2, and R3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.

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Patent Owner(s)

Patent OwnerAddress
ASM INTERNATIONAL N V1322 AP ALMERE

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hatanpaa, Timo Espoo, FI 20 608
Leskelä, Markku Espoo, FI 60 5948
Pore, Viljami Helsinki, FI 83 9315
Ritala, Mikko Espoo, FI 97 8656

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