Cell-specific reference generation and sensing
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United States of America Patent
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Oct 10, 2017
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app pub date -
Mar 16, 2016
filing date -
Mar 16, 2016
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Abstract
Methods, systems, and devices for operating a ferroelectric memory cell or cells are described. A portion of charge of a memory cell may be captured and, for example, stored using a capacitor or intrinsic capacitance of the memory array that includes the memory cell. The memory cell may be recharged (e.g., re-written). The memory cell may then be read, and a voltage of the memory cell may be compared to a voltage resulting from the captured charge. A logic state of the memory cell may be determined based at least in part on the voltage comparison.
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