Method of ONO stack formation

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United States of America Patent

PATENT NO 9793284
SERIAL NO

14942773

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Abstract

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A method of controlling the thickness of gate oxides in an integrated CMOS process which includes performing a two-step gate oxidation process to concurrently oxidize and therefore consume at least a first portion of the cap layer of the NV gate stack to form a blocking oxide and form a gate oxide of at least one metal-oxide-semiconductor (MOS) transistor in the second region, wherein the gate oxide of the at least one MOS transistor is formed during both a first oxidation step and a second oxidation step of the gate oxidation process.

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Patent Owner(s)

  • CYPRESS SEMICONDUCTOR CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ramkumar, Krishnaswamy San Jose, US 187 2890

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