Apparatus having first and second switching materials

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United States of America Patent

PATENT NO 9793322
APP PUB NO 20160322424A1
SERIAL NO

14700972

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Abstract

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In an example, an apparatus includes an electrically conductive component having a first side and a second side, a first switching material formed on the first side of the electrically conductive component, and a second switching material formed on the second side of the electrically conductive component. The second switching material may include a different material than the first switching material and resistance states of each of the first switching material and the second switching material are to be modified through application of electric fields through the first switching material and the second switching material. The apparatus may also include an electrode in contact with one of the first switching material and the second switching material.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
HEWLETT PACKARD ENTERPRISE DEVELOPMENT LPHOUSTON, TX8793

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Cited Art Landscape

Patent Info (Count) # Cites Year
 
QIMONDA AG (1)
2007/0249,090 Phase-change memory cell adapted to prevent over-etching or under-etching 97 2006
 
SANDISK TECHNOLOGIES LLC (1)
* 2012/0176,831 Resistive Random Access Memory With Low Current Operation 57 2012
 
HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP (2)
* 9224949 Memristive elements that exhibit minimal sneak path current 2 2011
* 2013/0334,485 MEMRISTIVE ELEMENTS THAT EXHIBIT MINIMAL SNEAK PATH CURRENT 3 2011
 
NATIONAL CHIAO TUNG UNIVERSITY (2)
8673727 Flexible non-volatile memory 1 2012
* 2014/0061,569 FLEXIBLE NON-VOLATILE MEMORY 1 2012
 
SAMSUNG ELECTRONICS CO., LTD. (1)
2014/0151,623 RESISTIVE RANDOM ACCESS MEMORY DEVICES FORMED ON FIBER AND METHODS OF MANUFACTURING THE SAME 1 2013
* Cited By Examiner

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