Semiconductor device with threshold MOSFET for high voltage termination
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United States of America Patent
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Oct 17, 2017
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app pub date -
Jan 17, 2017
filing date -
Jul 19, 2011
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Abstract
This invention discloses a semiconductor power device disposed in a semiconductor substrate comprising a lightly doped layer formed on a heavily doped layer and having an active cell area and an edge termination area. The edge termination area comprises a plurality P-channel MOSFETs. By connecting the gate to the drain electrode, the P-channel MOSFET transistors formed on the edge termination are sequentially turned on when the applied voltage is equal to or greater than the threshold voltage Vt of the P-channel MOSFET transistors, thereby optimizing the voltage blocked by each region.
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